emf17 / UMF17N transistors 1/4 power management (dual transistors) emf17 / UMF17N 2sa1774 and dtc123ee are housed independently in a emt or umt package. ! ! ! ! application power management circuit ! ! ! ! features 1) power switching circuit in a single package. 2) mounting cost and area can be cut in half. ! ! ! ! structure silicon epitaxial planar transistor ! ! ! ! equivalent circuits r 1 r 2 dtr2 tr1 (1) (2) (3) (4) (5) (6) r 1 =2.2k ? r 2 =2.2k ? ! ! ! ! external dimensions (units : mm) rohm : emt6 emf17 rohm : umt6 eiaj : sc-88 UMF17N abbreviated symbol :f17 abbreviated symbol : f17 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 5 ) ( 3 ) ( 6 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 each lead has same dimensions 0to0.1 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) each lead has same dimensions ! ! ! ! package, marking, and packaging specifications type UMF17N umt6 f17 tr 3000 package marking code basic ordering unit(pieces) emf17 emt6 f17 t2r 8000
emf17 / UMF17N transistors 2/4 ! ! ! ! absolute maximum ratings (ta=25 c) tr1 parameter symbol v cbo v ceo v ebo i c tj tstg p c limits ? 60 ? 50 ? 6 ? 150 150 ? 55~+150 150 (total) unit v v v ma c c mw ? collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature collector power dissipation ? 120mw per element must not be exceeded. dtr2 parameter ? 1 characteristics of built-in transistor. ? 2 each terminal mounted on a recommended land. symbol v cc v in i c i o p c tj tstg limits 50 ? 10~ + 20 100 100 150(total) 150 ? 55~ + 150 ? 1 ? 2 unit v v ma ma mw c c supply voltage input voltage collector current output current power dissipation junction temperature range of storage temperature ! ! ! ! electrical characteristics (ta=25 c) tr1 parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. ? 60 ? 50 ? 6 - - 120 - - - - - - - - - - 140 4 - - - ? 0.1 ? 0.1 560 ? 0.5 - 5 vi c = ? 50 a i c = ? 1ma i e = ? 50 a v cb = ? 60v v eb = ? 6v v ce = ? 6v, i c = ? 1ma v ce = ? 12v, i e = 2ma, f = 100mhz i c /i b = ? 50ma/ ? 5ma v cb = ? 12v, i e = 0a, f = 1mhz v v a a - v mhz pf typ. max. unit conditions collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage transition frequency output capacitance dtr2 parameter symbol min. typ. max. unit conditions ? transition frequency f t ? 250 ? 1.54 2.86 mhz v ce = 10v, i e =? 5ma, f = 100mhz ? characteristics of built-in transistor. v i(off) ?? 0.5 v v cc = 5v, i o = 100 a input voltage v i(on) 3.0 ?? v v o = 0.3v, i o = 20ma v o(on) ? 100 300 mv v o = 10ma, i i = 0.5ma output voltage i i ?? 3.8 ma v i = 5v input current i o(off) ?? 0.5 av cc = 50v, v i = 0v output current r 1 2.2 k ? ? input resistance g i 20 ?? ? v o = 5v, i o = 20ma dc current gain ? r 2 /r 1 0.8 1.0 1.2 ? resistance ratio
emf17 / UMF17N transistors 3/4 ! ! ! ! electrical characteristic curves tr1 -0.2 collector current : ic (ma) -50 -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 v ce = ? 6v base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics ta = 100 c 25 c ? 40 c -0.4 -4 -8 -1.2 0 -2 -6 -10 -0.8 -1.6 -2.0 -3.5 a -7.0 -10.5 -14.0 -17.5 -21.0 -24.5 -28.0 -31.5 i b = 0 ta = 25 c -35.0 collector current : i c (ma) collector to emitter voltage : v ce (v) fig.2 grounded emitter output characteristics ( ) -40 -80 -5 -3 -4 -2 -1 -20 -60 -100 0 i b = 0 ta = 25 c collector current : i c (ma) collector to emitter voltage : v ce (v) fig.3 grounded emitter output characteristics ( ? ) -50 a -100 -150 -200 -250 -500 -450 -400 -350 -300 500 200 100 50 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 dc current gain : h fe ta = 25 c v ce = -5v -3v -1v collector current : i c (ma) fig.4 dc current gain vs. collector current ( ) 500 200 100 50 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 dc current gain : h fe collector current : i c (ma) fig.5 dc current gain vs. collector current ( ? ) v ce = -6v ta = 100 c -40 c 25 c -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -1 -0.5 -0.2 -0.05 ta = 25 c collector saturation voltage : v ce(sat) (v) collector current : i c (ma) fig.6 collector-emitter saturation voltage vs. collector current ( ) i c /i b = 50 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -1 -0.5 -0.2 -0.05 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) fig.7 collector-emitter saturation voltage vs. collector current ( ? ) l c /l b = 10 ta = 100 c 25 c -40 c 50 100 0.5 20 50 100 200 500 1000 12 510 emitter current : i e (ma) transition frequency : f t (mhz) fig.8 gain bandwidth product vs. emitter current ta = 25 c v ce = - 12v collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob ( pf) emitter input capacitance : cib ( pf) collector output capacitance vs. emitter input capacitance vs. collector-base voltage emitter-base voltage fig.9 -0.5 -20 2 5 10 -1 -2 -5 -10 20 cib cob ta = 25 c f = 1mhz i e = 0a i c = 0a
emf17 / UMF17N transistors 4/4 dtr2 100 200 500 1m 2m 5m 10m 20m 50m 100m 100 50 20 10 5 2 1 500m 200m 100m input voltage : v i(on) (v) output current : i o (a) fig.9 input voltage vs. output current (on characteristics) v o =0.3v ta= ? 40 c 25 c 100 c input voltage : v i(off) (v) output current : io (a) 0 3.0 10m 1 2m 5m 1m 200 500 100 20 50 10 2 5 0.5 1.0 1.5 2.0 2.5 v cc =5v ta=100 c 25 c ? 40 c fig.10 output current vs. input voltage (off characteristics) output current : i o (a) dc current gain : g i fig.11 dc current gain vs. output current v o =5v 100 200 500 1m 2m 5m 10m 20m 50m 100m 1k 500 200 100 50 20 10 5 2 1 ta=100 c 25 c ? 40 c 100 200 500 1m 2m 5m 10m 20m 50m 100m 1 500m 200m 100m 50m 20m 10m 5m 2m 1m l o /l i =20 output current : i o (a) output voltage : v o (on) (v) ta=100 c 25 c ? 40 c fig.12 output voltage vs. output current
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